unisonic technologies co., ltd 2sc3834 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r203-026.c switch npn transistor ? description the utc 2sc3834 is an epitaxial planar type npn silicon transistor.. ? features * humidifier, dc-dc converter, and general purpose lead-free: 2sc3834l halogen-free: 2sc3834g ? ordering information ordering number pin assignment normal lead free plating halogen free package 1 2 3 packing 2SC3834-TA3-T 2sc3834l-ta3-t 2sc3834g-ta3-t to-220 b c e tube
2sc3834 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r203-026.c ? absolute maximum rating (t a =25 c) parameter symbol ratings unit collector-base voltage v cbo 200 v collector-emitter voltage v ceo 120 v emitter-base voltage v ebo 8 v collector current (pulse) i c 7 a base current i b 3 a collector dissipation (t c =25 c) p c 50 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-emitter breakdown voltage bv ceo i c = 50ma 120 v collector cutoff current i cbo v cb =200v, i e =0a 100 a emitter cutoff current i ebo v eb =8v, i c =0a 100 a dc current gain (note) h fe v ce =4v, i c =3a 70 220 collector-emitter satu ration voltage v ce(sat) i c =3a, i b =0.3ma 0.5 v base-emitter satura tion voltage v be(sat) i c =3a, i b =0.3ma 1.2 v current gain bandwidth product f t i e =-0.5ma, v ce =12v, f=100mhz 30 mhz output capacitance c ob v cb =10 v, i e =0a, f=1mhz 110 pf
2sc3834 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r203-026.c ? typical characteristics 7 6 5 4 3 2 1 0 01234 collector-emitter voltage,v ce (v) collector current,i c (a) i c -v ce characteristics (typical) 200ma 150ma 100ma 60ma 40ma 20ma i e =10ma 2 1 0.005 i c =1a 3a 5a v ce(sat) -i b characteristics (typical) base current,i b (a) collector-emitter saturation,v ce(sat) (v) 0.01 0.05 0.1 0.5 1 0 v ce =12v 0 10 20 30 -0.01 -0.05 -0.1 -0.5 -1 -5 emitter current,i e (a) f t -i e characteristics (typical) 100ms 10ms without healstink natural cooling 510 0.05 0.1 0.5 1 5 10 20 safe operating area (single pulse) collect-emitter voltage,v ce (v) 50 120 200
2sc3834 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r203-026.c ? typical characteristics(cont.) 025 0 2 50 75 ambient temperature,t a ( ) 125 150 10 20 30 40 50 p c -t a derating maximum power dissipation,p c (w) without heatsink w ith infinite heatsink 100 utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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